UV PHOTODIODES
Silicon Carbide UV Photodiodes
UV-photodiodes based on SiC (Silicon Carbide) provide the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.
These SiC detectors can be permanently operated at up to 170°C
| SIC01S | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
| SIC01S-18 | 215 - 365 nm | 285 nm | 0.06 mm² | TO-18 | UV broadband |
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| SIC01S-18ISO90 | 215 - 365 nm | 285 nm | 0.06 mm² | TO-18 | UV broadband, 2 isolated pins, 1 ground pin |
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| SIC01S-A18 | 310 - 370 nm | 335 nm | 0.06 mm² | TO-18 | UVA | / |
| SIC01S-B18 | 230 - 315 nm | 280 nm | 0.06 mm² | TO-18 | UVB | / |
| SIC01S-C18 | 230 - 285 nm | 270 nm | 0.06 mm² | TO-18 | UVC |
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| SIC01M | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
| SIC01M-18 | 215 - 365 nm | 285 nm | 0.2 mm² | TO-18 | UV broadband |
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| SIC01M-18ISO90 | 215 - 365 nm | 285 nm | 0.2 mm² | TO-18 | UV broadband, 2 isolated pins, 1 ground pin | / |
| SIC01M-5Lens | 220 - 360 nm | 285 nm | 0.2 mm² | TO-5 | UV broadband, flame detection |
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| SIC01M-A18 | 310 - 370 nm | 335 nm | 0.2 mm² | TO-18 | UVA | / |
| SIC01M-B18 | 230 - 315 nm | 280 nm | 0.2 mm² | TO-18 | UVB | / |
| SIC01M-C5 | 230 - 285 nm | 270 nm | 0.2 mm² | TO-5 | UVC | request |
| SIC01M-E18 | UVI | / | 0.2 mm² | TO-18 | DIN5050/CIE087 UV-Index measurement (Erythem) | / |
| SIC01D | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
| SIC01D-18 | 215 - 365 nm | 285 nm | 0.5 mm² | TO-18 | UV broadband | / |
| SIC01D-A18 | 310 - 370 nm | 335 nm | 0.5 mm² | TO-18 | UVA | / |
| SIC01D-B18 | 230 - 315 nm | 280 nm | 0.5 mm² | TO-18 | UVB | / |
| SIC01D-C18 | 230 - 285 nm | 270 nm | 0.5 mm² | TO-18 | UVC | / |
| SIC01D-E18 | UVI | / | 0.5 mm² | TO-18 | DIN5050/CIE087 UV-Index measurement (Erythem) | / |
| SIC01L | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
| SIC01L-18 | 215 - 365 nm | 285 nm | 1,0 mm² | TO-18 | UV broadband |
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| SIC01L-18ISO90 | 215 - 365 nm | 285 nm | 1.0 mm² | TO-18 | UV broadband, 2 isolated pins, 1 ground pin | / |
| SIC01L-5 | 210 - 380 nm | 285 nm | 1,0 mm² | TO-5 | UV broadband |
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| SIC01L-A5 | 310 - 370 nm | 335 nm | 1.0 mm² | TO-5 | UVA | / |
| SIC01L-B5 | 230 - 315 nm | 280 nm | 1.0 mm² | TO-5 | UVB | / |
| SIC01L-C5 | 230 - 285 nm | 270 nm | 1.0 mm² | TO-5 | UVC |
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| SIC01L-E5 | UVI | / | 1.0 mm² | TO-5 | DIN5050/CIE087 UV-Index measurement (Erythem) | / |
| SIC01XL | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
| SIC01XL-5 | 220 - 360 nm | 280 nm | 4.0 mm² | TO-5 | UV broadband |
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| SIC01XL-5ISO90 | 220 - 360 nm | 280 nm | 4.0 mm² | TO-5 | UV broadband, 2 isolated pins, 1 ground pin | / |
| SIC01XL-A5 | 310 - 370 nm | 335 nm | 4.0 mm² | TO-5 | UVA only sensivity | / |
| SIC01XL-B5 | 230 - 315 nm | 280 nm | 4.0 mm² | TO-5 | UVB only sensivity | / |
| SIC01XL-C5 | 230 - 285 nm | 270 nm | 4.0 mm² | TO-5 | UVC only sensivity | / |
| SIC01XL-E5 | UVI | / | 4.0 mm² | TO-5 | DIN5050/CIE087 UV-Index measurement (Erythem) | / |
Silicon Carbide UV Photodiodes - multi chip array
UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity
| Spectral range | Peak WL | Chip size | Package | Note | Data sheet | |
| SIC01L4-5 | 210 - 380 nm | 280 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / |
| SIC01L4-C5C | 230 - 285 nm | 270 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / |
Silicon Carbide UV Photodiodes with TIA
Silicon Carbide UV photodetector with integrated transimpendance amplifier in TO-5 metal can housing.
--> 0...5V stable output voltage
--> no external amplifier required
--> irradiance up to 18W/cm² and UVA,-B,-C versions available on request
| Spectral range | Peak WL | max. Irradiance | Package | Note | Data sheet | |
| UV-TIAMO-BL | 210 - 380 nm | 280 nm | <18 nW / cm² | TO-5 | ball concentration lens, -> flame detection |
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| UV-TIAMO | 210 - 380 nm | 280 nm | <18 µW / cm² | TO-5 | flat window with diffusor |
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| UV-TIAMO-S | 210 - 380 nm | 280 nm | <18 mW / cm² | TO-5 | flat window with diffusor |
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| UV-TIAMO-M | 210 - 380 nm | 280 nm | <180 mW / cm² | TO-5 | flat window with attenuator |
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| UV-TIAMO-E2 | UVI | / | 30 UVI | TO-5 | flat window, measuring of UV-Index (DIN5050/CIE087) | / |
Gallium Phosphide UV Photodiodes
UV photodiodes based on GaP
| Spectral range | Active Area | Package | Note | Data sheet | |
| EPD-150-0/2.5 | 130 - 550 nm | 4.8 mm² | TO-39 | sapphire window |
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| EPD-150-0/3.6 | 130 - 550 nm | 10.9 mm² | TO-39 | sapphire window |
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| EPD-440-0/0.9 | 190 - 550 nm | 0.51 mm² | TO-46 |
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| EPD-440-0/1.4 | 190 - 550 nm | 1.2 mm² | TO-46 |
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| EPD-440-0/2.5 | 190 - 550 nm | 4.8 mm² | TO-39 |
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| EPD-440-0/3.6 | 190 - 550 nm | 10.9 mm² | TO-39 |
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| EPD-280-0-0.3-1 | 220 - 380 nm | 0.056 mm² | TO-46 | request | |
| EPD-270-0-0.3-2 | 230 - 285 nm | 0.056 mm² | TO-39 | request | |
| EPD-365-0/0.9 | 245 - 405 nm | 0.51 mm² | TO-46 | UG11 filter |
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| EPD-365-0/1.4 | 245 - 405 nm | 1.2 mm² | TO-46 | UG11 filter |
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| EPD-365-0/2.5 | 245 - 405 nm | 4.8 mm² | TO-39 | UG11 filter |
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| EPD-365-0/3.6 | 245 - 405 nm | 10.9 mm² | TO-39 | UG11 filter |
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| EPD-310-0-0.3-2 | 290 - 330 nm | 0.056 mm² | TO-39 | request | |
| EPD-360-0-0.3-2 | 230 - 400 nm | 0.056 mm² | TO-39 | request |
GaN, AlGaN and InGaN UV Photodiodes
UV-photodiodes based on GaN, AlGaN and InGaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN
| Spectral range | Chip size | Package | Note | Data sheet | |
| GUVC-T10GD | 210 - 280 nm | 0.16 mm² | TO-46 | quartz window |
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| GUVB-T11GD | 200 - 320 nm | 0.16 mm² | TO-46 | quartz window | request |
| GUVB-S11SD | 235 - 320 nm | 0.16 mm² | SMD 3528 | silicone window |
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| GUVA-T11GD | 200 - 370 nm | 0.16 mm² | TO-46 | quartz window |
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| GUVA-S12SD | 240 - 370 nm | 0.16 mm² | SMD 3528 | silicone window |
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| GUVA-S22ED | 290 - 370 nm | 0.16 mm² | SMD 1608 | silicone/epoxy window |
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| GUVA-C22ED | 240 - 370 nm | 0.16 mm² | COB 2418 | Si encapsulant | request |
| GUVV-T10GD | 230 - 395 nm | 0.16 mm² | TO-46 | quartz window |
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| GUVV-S10SD | 240 - 395 nm | 0.16 mm² | SMD 3528 | silicone/epoxy window | request |
GaN, AlGaN and InGaN UV Photodiodes with TIA
UV-photodiode based on GaN, AlGaN and InGaN with integrated transimpedance amplifier for ultra low level UV radiation detection
Wavelength of peak response: 280 nm, 320 nm, 370 nm, 395 nm
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN
| Spectral range | Package | Note | Data sheet | |
| GUVC-T21GH | 220 - 280 nm | TO-5 | integrated TI amplifier, quartz window |
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| GUVB-T21GH | 220 - 320 nm | TO-5 | integrated TI amplifier, quartz window | request |
| GUVA-T21GH | 220 - 370 nm | TO-5 | integrated TI amplifier, quartz window | request |
| GUVV-T21GH | 220 - 395 nm | TO-5 | integrated TI amplifier, quartz window |
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UV Sensor Modules GaN
UV Sensor Modules based on GaN
-> PHASE OUT
| Spectral range | Size | Note | Data sheet | |
| GUVA-T11GM-LA | 220 - 370 nm | 28 x 17 x 9 mm² | basic |
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AlGaN UV Photodiodes
UV photodiodes based on AlGaN
| Spectral range | Chip size | Package | Note | Data sheet | |
| AlGaN-UVB | 225 - 317 nm | 0.076 mm² | TO-18 | peak at 300 nm |
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TiO2 UV Photodiodes
UV photodiodes based on thin film TiO2 sensor technology
| Spectral range | Package | Note | Data sheet | |
| UVD39 | 225 - 380 nm | TO-39 | peak at 300 nm, intrinsic visible blind |
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| TW30DZ | 253 - 361 nm | TO-46 | peak at 300 nm, intrinsic visible blind |
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