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									- GaAs HEMTs (High Electron Mobility Transistors)
															HEMT series of 
															products was 
															developed by 
															Sumitomo Electric 
															for a wide range of 
															general purpose 
															applications 
															including, but not 
															limited, to DBS 
															converters, 
															Handsets, Base 
															Station, 
															Radio-Telescope and 
															many other 
															applications where 
															low-noise and gain 
															is required. 
															Sumitomo Electric 
															has a full line-up 
															of HEMT products 
															specified for 
															applications in the 
															4GHz to 12GHz 
															frequency range.
														
														
- 
															 LG 
															Package LG 
															Package
- 
															 LP 
															Package LP 
															Package
Specifications
| Part Number | Noise figure NF Typ. (dB) | Associated 
																Gain Gas Typ. (dB) | Drain 
																Voltage VDS (V) | Drain 
																Current lDS (mA) | Frequency f (GHz) | Outline/ Package Code | Application | 
|---|---|---|---|---|---|---|---|
| FHC40LG | 0.3 | 15.5 | 2 | 10 | 4 | LG | Low Noise Amp, TVRO, BTS | 
| FHC30LG | 0.35 | 14.5 | 2 | 10 | 4 | LG | |
| FHX76LP | 0.4 | 13.5 | 2 | 10 | 12 | LP | Low Noise Amp | 
| FHX13LG | 0.45 | 13.0 | 2 | 10 | 12 | LG | |
| FHX14LG | 0.55 | 13.0 | 2 | 10 | 12 | LG | |
| FHX04LG | 0.75 | 10.5 | 2 | 10 | 12 | LG | |
| FHX05LG | 0.9 | 10.5 | 2 | 10 | 12 | LG | |
| FHX06LG | 1.1 | 10.5 | 2 | 10 | 12 | LG | |
| FHX35LG | 1.2 | 10.0 | 3 | 10 | 12 | LG | Low Noise Amp, Mixer, GPS | 
| FHX35LP | 1.2 | 10.0 | 3 | 10 | 12 | LP | 
| Part Number | Noise figure NF Typ. (dB) | Associated 
																Gain Gas Typ. (dB) | Drain 
																Voltage VDS (V) | Drain 
																Current lDS (mA) | Frequency f (GHz) | Application | 
|---|---|---|---|---|---|---|
| FHX13X | 0.45 | 13 | 2 | 10 | 12 | Low Noise Amp | 
| FHX14X | 0.55 | 13 | 2 | 10 | 12 | |
| FHX04X | 0.75 | 10.5 | 2 | 10 | 12 | |
| FHX05X | 0.9 | 10.5 | 2 | 10 | 12 | |
| FHX06X | 1.1 | 10.5 | 2 | 10 | 12 | |
| FHX45X | 0.55 | 12 | 2 | 10 | 12 | |
| FHX35X | 1.2 | 10 | 2 | 10 | 12 | 
X: Conventional Chip
- GaAs FETs (Chip)
Features
- High Gain, High Frequency Chip
														
Specifications
| Part Number | 1dB Compression Power P1dB (dBm) | 1dB Compression Gain G1dB (dB) | Power Added Efficiency ηadd (%) | Frequency f (GHz) | Drain 
																Voltage VDS (V) | Drain 
																Current lDS (mA) | Application | 
|---|---|---|---|---|---|---|---|
| FSX017X | 21.5 | 11 | 42 | 8.0 | 8 | 38 | X-band Amplifier | 
| FSX027X | 24.5 | 10 | 41 | 8.0 | 8 | 77 | |
| FLX257XV | 33.5 | 7.5 | 31 | 10.0 | 10 | 600 | |
| FLC087XP | 28.5 | 7 | 31.5 | 8.0 | 10 | 180 | C-band Amplifier | 
| FLC157XP | 31.5 | 6 | 29.5 | 8.0 | 10 | 360 | |
| FLC307XP | 34.8 | 9.5 | 37 | 4.0 | 10 | 720 | |
| FLK017XP | 20.5 | 8 | 26 | 14.5 | 10 | 36 | Ku-band Amplifier | 
| FLK027XP | 24 | 7 | 32 | 14.5 | 10 | 60 | |
| FLK027XV | 24 | 7 | 32 | 14.5 | 10 | 60 | |
| FLK057XV | 27 | 7 | 32 | 14.5 | 10 | 120 | |
| FLK107XV | 30 | 6.5 | 31 | 14.5 | 10 | 240 | |
| FLK207XV | 32.5 | 6 | 27 | 14.5 | 10 | 480 | 
X: Conventional Chip, XP: PHS (Plated Heat Sink), XV: Via Hole PHS
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|  GaAs 
													HEMTs | 




